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| @vic AV5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATING -160 -150 -5 625 -600 150 -55 ~ +150 UNIT V V V mW mA C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) fT TEST CONDITIONS Ic=-100A,IE=0 Ic=-1mA,IB=0 IE=-10A,Ic=0 VCB=-120V,IE=0 VEB=-3V,Ic=0 VCE=-5V,Ic=-1mA VCE=-5V,Ic=-10mA VCE=-5V,Ic=-50mA Ic=-10mA,IB=-1mA Ic=-50mA,IB=-5mA Ic=-10mA,IB=-1mA Ic=-50mA,IB=-5mA VCE=-10V,Ic=-10mA,f=100MHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA -50 -50 80 80 80 400 -0.2 -0.5 -1 -1 400 Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product V V MHz 100 QW-R201-001,A @vic AV5401 PARAMETER Output capacitance Noise Figure PNP EPITAXIAL SILICON TRANSISTOR SYMBOL Cob NF (continued) TEST CONDITIONS VCB=-10V,IE=0 f=1MHz Ic=-0.25mA,VCE=-5V Rs=1k,f=10Hz to 15.7kHz MIN TYP MAX 6.0 8 UNIT pF dB Note: Pulse test: PW<300s, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 B 150-240 C 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.1 Collector output Capacitance 20 Fig.2 DC current Gain 3 10 3 -10 Fig.3 Base-Emitter on Voltage Ic,Collector current (mA) Cob,Capacitance (pF) 16 f=1MHz IE=0 HFE, DC current Gain VCE=-5V 2 10 VCE=-5V 2 -10 12 8 1 10 1 -10 4 0 0 -10 1 -10 2 -10 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector-Base voltage (V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 1 -10 Fig.5 Current gain-bandwidth product 3 10 Current Gain-bandwidth T product,f(MHz) Ic=10*IB Saturation voltage (V) VCE=-10V 2 10 0 -10 VBE(sat) -1 -10 1 10 VCE(sat) -2 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Ic,Collector current (mA) Ic,Collector current (mA) QW-R201-001,A |
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